2sb649, 2sb649a silicon pnp epitaxial application low frequency power amplifier complementary pair with 2sd669/a outline 1. emitter
2. collector
3. base to-126 mod 1 2 3
2sb649, 2sb649a 2 absolute maximum ratings (ta = 25 c) ratings item symbol 2sb649 2sb649a unit collector to base voltage v cbo ?80 ?80 v collector to emitter voltage v ceo ?20 ?60 v emitter to base voltage v ebo ? ? v collector current i c ?.5 ?.5 a collector peak current i c(peak) ? ? a collector power dissipation p c 11w p c * 1 20 20 w junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c note: 1. value at t c = 25 c
2sb649, 2sb649a 3 electrical characteristics (ta = 25 c) 2sb649 2sb649a item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo ?80 ?80 v i c = ? ma, i e = 0 collector to emitter breakdown voltage v (br)ceo ?20 ?60 v i c = ?0 ma, r be = emitter to base breakdown voltage v (br)ebo ? ? v i e = ? ma, i c = 0 collector cutoff current i cbo ?0 ?0 m av cb = ?60 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 200 v ce = ? v, i c = ?50 ma h fe2 30 30 v ce = ? v, i c = ?00 ma* 2 collector to emitter saturation voltage v ce(sat) 1 1v i c = ?00 ma, i b = ?0 ma base to emitter voltage v be ?.5 ?.5 v v ce = ? v, i c = ?50 ma gain bandwidth product f t 140 140 mhz v ce = ? v, i c = ?50 ma collector output capacitance cob 27 27 pf v cb = ?0 v, i e = 0, f = 1 mhz notes: 1. the 2sb649 and 2sb649a are grouped by h fe1 as follows. 2. pulse test bc d 2sb649 60 to 120 100 to 200 160 to 320 2sb649a 60 to 120 100 to 200
2sb649, 2sb649a 4 maximum collector dissipation
curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) area of safe operation i cmax (?3.3 v, ?.5 a) (?0 v, ?.5 a) dc operation (t c = 25 c) (?20 v, ?.038 a) (?60 v, ?.02 a) 2sb649a 2sb649 ? ?.0 ?.3 ?.1 ?.03 ?.01 ? ? ?0 collector to emitter voltage v ce (v) ?0 ?00 ?00 collector current i c (a) t c = 25 c p c = 20 w typical output characteristics ?.0 ?.8 ?.6 ?.4 ?.2 0 ?0 ?0 ?0 i b = 0 ?.5 ma ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?0 ?0 collector to emitter voltage v ce (v) collector current i c (a) typical transfer characteristics ?00 ?00 collector current i c (ma) ?0 ? 0 ?.4 base to emitter voltage v be (v) ?.8 ?.2 ?.6 ?.0 v ce = ? v ta = 75 c 25 ?5
2sb649, 2sb649a 5 dc current transfer ratio
vs. collector current 350 v ce = ?v ta = 75 c 25 c ?5 c 350 250 200 150 dc current transfer ratio h fe 100 50 0 ? ?0 ?00 ?,000 collector current i c (ma) collector to emitter saturation
voltage vs. collector current i c = 10 i b ?.2 ?.0 ?.8 ?.6 ?.4 ?.2 ? ? ?0 collector current i c (ma) ?00 ?5 25 ?,000 collector to emitter saturation voltage
v ce(sat) (v) ta = 75 c collector current i c (ma) i c = 10 i b ?.2 ?.0 ?.8 ?.6 ?.4 ?.2 ? ? ?0 ?00 ?,000 base to emitter saturation voltage
v be(sat) (v) base to emitter saturation voltage
vs. collector current ta = ?5 c 25 75 v ce = ? v gain bandwidth product
vs. collector current 240 200 160 120 80 40 0 ?0 ?0 gain bandwidth product f t (mhz) ?00 ?00 ?,000 collector current i c (ma)
2sb649, 2sb649a 6 collector output capacitance vs.
collector to base voltage f = 1 mhz
i e = 0 200 100 50 20 10 5 2 ? ? ?0 ?0 ?00 collector to base voltage v cb (v) collector output capacitance c ob (pf)
2sb649, 2sb649a 7 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachi? permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user? unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachi? semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachi? products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachi? sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachi? products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
semiconductor & ic div.
nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan
tel: tokyo (03) 3270-2111
fax: (03) 3270-5109 for further information write to:
hitachi america, ltd.
semiconductor & ic div.
2000 sierra point parkway
brisbane, ca. 94005-1835
u s a
tel: 415-589-8300
fax: 415-583-4207
hitachi europe gmbh
electronic components group
continental europe
dornacher stra? 3
d-85622 feldkirchen
m?nchen
tel: 089-9 91 80-0
fax: 089-9 29 30 00
hitachi europe ltd.
electronic components div.
northern europe headquarters
whitebrook park
lower cookham road
maidenhead
berkshire sl6 8ya
united kingdom
tel: 0628-585000
fax: 0628-778322
hitachi asia pte. ltd.
16 collyer quay #20-00
hitachi tower
singapore 0104
tel: 535-2100
fax: 535-1533
hitachi asia (hong kong) ltd.
unit 706, north tower,
world finance centre,
harbour city, canton road
tsim sha tsui, kowloon
hong kong
tel: 27359218
fax: 27306071
|
